Bias-controlled photocurrent generation process in GaN-based ultraviolet p–i–n photodetectors fabricated with a thick Al2O3 passivation layer
Pradip Dalapati, Kosuke Yamamoto, Toshiharu Kubo, Takashi Egawa, Makoto Miyoshi
Topics & Concepts
PhotocurrentPassivationMaterials sciencePhotodetectorOptoelectronicsUltravioletLayer (electronics)BiasingDark currentElectric fieldCharge carrierVoltageOpticsNanotechnologyPhysicsQuantum mechanicsGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties