Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review
J. Ajayan, D. Nirmal, P. Mohankumar, B. Mounika, Sandip Bhattacharya, Shubham Tayal, A.S. Augustine Fletcher
Topics & Concepts
Materials scienceOptoelectronicsWaferPassivationGallium nitrideTransistorPower semiconductor deviceFabricationReliability (semiconductor)Engineering physicsElectrical engineeringNanotechnologyLayer (electronics)Power (physics)VoltageEngineeringPhysicsAlternative medicinePathologyMedicineQuantum mechanicsGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devices