Tuning the Schottky barrier height in a multiferroic In<sub>2</sub>Se<sub>3</sub>/Fe<sub>3</sub>GeTe<sub>2</sub> van der Waals heterojunction
M. Javaid, Patrick D. Taylor, Sherif Abdulkader Tawfik, Michelle J. S. Spencer
Abstract
Our work presents a tuneable and switchable Schottky barrier without the need to apply any external electric field or strain, which promotes the controllability of carrier transport in high-density memory devices.
Topics & Concepts
HeterojunctionSchottky barrierMaterials scienceFerroelectricitySemiconductorCondensed matter physicsElectric fieldOptoelectronicsDensity functional theoryField-effect transistorSchottky diodeElectronic band structureMetal–semiconductor junctionBand gapTransistorPhysicsChemistryVoltageComputational chemistryDielectricDiodeQuantum mechanics2D Materials and ApplicationsMultiferroics and related materialsPerovskite Materials and Applications