Role of the Hf/Si Interfacial Layer on the High Performance of MoS<sub>2</sub>-Based Conductive Bridge RAM for Artificial Synapse Application
Sreekanth Ginnaram, Jian‐Tai Qiu, S. Maikap
Abstract
In this letter, we demonstrate the key role of the Hf/Si interfacial layer (IL) in Al/Cu/IL/MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /TiN conductive bridge RAM. Owing to controlling Cu migration through Hf rather than Si, the Hf interface device offers consecutive >4000 DC cycles and long program/erase (P/E) endurance of >2 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> cycles under the low current operation of 100 μA at the fast switching speed of 100 ns. The Hf interface device shows gradual RESET, long-term potentiation/depression (LTP/LTD) pulses of 40/100 with small pulse width of 100 ns and a low power consumption of <; 13 pJ is needed for artificial synapse applications.