Atomic layer deposition of chalcogenides for next-generation phase change memory
Youn‐Kyoung Lee, Chanyoung Yoo, Woohyun Kim, Jeong Woo Jeon, Cheol Seong Hwang
Abstract
Atomic layer deposition (ALD) of chalcogenides is an essential technique for low-power and high-capacity phase-change memory. This review provides an overview on the recent progress in the ALD of chalcogenides including Ge–Sb–Te and Ge–Se alloys.
Topics & Concepts
Atomic layer depositionMaterials sciencePhase-change memoryDeposition (geology)Layer (electronics)Phase changeNanotechnologyPhase (matter)Engineering physicsOptoelectronicsChemistryPhysicsPaleontologyBiologyOrganic chemistrySedimentPhase-change materials and chalcogenidesChalcogenide Semiconductor Thin FilmsQuantum Dots Synthesis And Properties