A Cryo-CMOS Voltage Reference in 28-nm FDSOI
Yuanyuan Yang, Kushal Das, Alireza Moini, D. J. Reilly
Abstract
The control interface of a large-scale quantum computer will likely require electronic subsystems that operate in close proximity to the qubits, at deep cryogenic temperatures. In this letter, we report low-temperature performance of a custom cryo-CMOS voltage reference circuit fabricated in a 28-nm fully depleted silicon on insulator (FDSOI) CMOS process, dissipating about 15 μW. This MOS-only reference circuit is functional from room temperature down to liquid helium temperature (4 K), showing a temperature coefficient of 0.6 mV/K. The measured supply sensitivity of our reference circuit is better than -50 dB at 4 K temperature. Beyond the specific application as low-power reference, this circuit is an ideal test-vehicle for developing design approaches that mitigate the adverse effects of cryogenic temperatures on circuit performance.