Fully epitaxial, monolithic ScAlN/AlGaN/GaN ferroelectric HEMT
Ding Wang, Ping Wang, Minming He, Jiangnan Liu, Shubham Mondal, Mingtao Hu, Danhao Wang, Yuanpeng Wu, Tao Ma, Zetian Mi
Abstract
In this Letter, we demonstrated fully epitaxial ScAlN/AlGaN/GaN based ferroelectric high electron mobility transistors (HEMTs). Clean and atomically sharp heterostructure interfaces were obtained by utilizing molecular beam epitaxy. The fabricated ferroelectric gate HEMTs showed counterclockwise hysteretic transfer curves with a wide threshold voltage tuning range of 3.8 V, a large ON/OFF ratio of 3 × 107, and reconfigurable output characteristics depending on the poling conditions. The high quality ferroelectric gate stack and effective ferroelectric polarization coupling lead to improved subthreshold performance, with subthreshold swing values approaching 110 and 30 mV/dec under forward and backward gate sweeps, respectively. The results provide fundamental insight into the ferroelectric polarization coupling and threshold tuning processes in ferroelectric nitride heterostructures and are promising for nitride-based nonvolatile, multi-functional, reconfigurable power, and radio frequency devices as well as memory devices and negative capacitance transistors for next-generation electronics.