Variability Modeling in Triple-Gate Junctionless Nanowire Transistors
Renan Trevisoli, Marcelo Antonio Pavanello, Rodrigo T. Doria, Carlos E. Capovilla, Sylvain Barraud, Michelly de Souza
Abstract
This work aims at proposing an analytical model for the variability of the threshold voltage and drain current in junctionless nanowire transistors. The model is continuous in all operation regions and has been validated through Monte Carlo simulations using a physically based drain current model and 3-D numerical simulations. A discussion about the influences of each variability source based on the proposed model is carried out. Finally, the modeled results are compared to the experimental data for a fully physical validation.
Topics & Concepts
NanowireMonte Carlo methodTransistorThreshold voltageCurrent (fluid)VoltageLogic gateWork (physics)Electronic engineeringMaterials scienceComputer scienceStatistical physicsOptoelectronicsElectrical engineeringPhysicsEngineeringMechanical engineeringStatisticsMathematicsAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesNanowire Synthesis and Applications