Compositional modulation is driven by aliovalent doping in n-type TiCoSb based half-Heuslers for tuning thermoelectric transport
Avinash Vishwakarma, Nagendra S. Chauhan, Ruchi Bhardwaj, Kishor Kumar Johari, Sanjay R. Dhakate, Bhasker Gahtori, Sivaiah Bathula
Topics & Concepts
Materials scienceSpark plasma sinteringThermoelectric effectIntermetallicPhonon scatteringDopantThermal conductivityDopingTernary operationThermoelectric materialsElectron mobilityMicrostructureAnalytical Chemistry (journal)Condensed matter physicsMetallurgyOptoelectronicsThermodynamicsComposite materialAlloyProgramming languageChemistryComputer sciencePhysicsChromatographyAdvanced Thermoelectric Materials and DevicesHeusler alloys: electronic and magnetic propertiesChalcogenide Semiconductor Thin Films