High power λ ~ 8.5 μm quantum cascade laser grown by MOCVD operating continuous-wave up to 408 K
Fei Teng, Shenqiang Zhai, Jinchuan Zhang, Ning Zhuo, Junqi Liu, Lijun Wang, Shuman Liu, Zhiwei Jia, Kun Li, Yongqiang Sun, Kai Guo, Fengqi Liu, Zhanguo Wang
Abstract
Abstract Robust quantum cascade laser (QCL) enduring high temperature continuous-wave (CW) operation is of critical importance for some applications. We report on the realization of lattice-matched InGaAs/InAlAs/InP QCL materials grown by metal-organic chemical vapor deposition (MOCVD). High interface quality structures designed for light emission at 8.5 μ m are achieved by optimizing and precise controlling of growth conditions. A CW output power of 1.04 W at 288 K was obtained from a 4 mm-long and 10 μ m-wide coated laser. Corresponding maximum wall-plug efficiency and threshold current density were 7.1% and 1.18 kA/cm 2 , respectively. The device can operate in CW mode up to 408 K with an output power of 160 mW.