Effect of film thickness and temperature on the resistive switching characteristics of the Pt/HfO2/Al2O3/TiN structure
Yulin Liu, Sha Ouyang, Jie Yang, Minghua Tang, Wei Wang, Gang Li, Zhi Zou, Yifan Liang, Yucheng Li, Yongguang Xiao, Shaoan Yan, Qi Chen, Zheng Li
Topics & Concepts
TinX-ray photoelectron spectroscopyMaterials scienceResistive touchscreenAtomic force microscopyDielectricAnalytical Chemistry (journal)OptoelectronicsComposite materialNanotechnologyChemical engineeringElectrical engineeringMetallurgyChemistryEngineeringChromatographyAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices