Recent progress in electron–phonon interaction of two‐dimensional materials
Zhiying Bai, Dawei He, Shaohua Fu, Qing Miao, Shuangyan Liu, Mohan Huang, Kun Zhao, Yongsheng Wang, Xiaoxian Zhang
Abstract
Abstract The coupling between electrons and phonons is ubiquitous in condensed matter physics. In recent years, with the rise of two dimensional (2D) materials, electron–phonon interaction exhibits unique characteristics compared with their three‐dimensional counterparts. In this paper, research progress of electron–phonon interaction in 2D materials is briefly reviewed, mainly focus on thermoelectric device, conventional superconductor, field effect transistor, and photoelectric device. Firstly, electron–phonon interaction on thermoelectric application of 2D materials is concluded according to recent reports, and strategies to increase figure of merit are discussed. Next, strong electron–phonon coupling strength is essential for increasing transition temperature of superconductors. Conversely, electron–phonon interaction inhibits the carrier mobility for transport process. By summarizing research works in the past years, its role on the performance of 2D materials‐based field effect transistors is fully evaluated. Furthermore, the influences of electron–phonon interaction on light–matter interaction in 2D materials are briefly overviewed. Finally, some outlooks in the field are prospected. In a word, understanding electron–phonon interaction in 2D materials establishes strategically important directions for manipulating physical properties and optimizing device design.