Physical Insights into Vacancy-Based Memtransistors: Toward Power Efficiency, Reliable Operation, and Scalability
Maheswari Sivan, Jin Feng Leong, Joydeep Ghosh, Baoshan Tang, Jieming Pan, Evgeny Zamburg, Aaron Thean
Abstract
memtransistor and hence enables the investigation of the carrier polarity effect (electrons vs holes) on vacancy transport. Nevertheless, the validity of the model can be extended to different materials by a simple material-dependent parameter modification. Building upon the existing understanding of Schottky barrier height modulation, our study reveals three key insights─leveraging threshold voltage shifts to lower write bias; optimizing lattice temperature distribution and read bias polarity to achieve successful memory state recovery; engineering contact work function to overcome the detrimental parasitic current flow in short channel ambipolar memtransistors. Therefore, understanding the significant correlation between the switching mechanisms, different material systems, and device structures allows performance optimization of operating modes and device designs for future memtransistors-based computing systems.