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Effects of BOX thickness, silicon thickness, and backgate bias on SCE of ET-SOI MOSFETs

Elizabeth Mei-hua Su, David Hong, S. Cristoloveanu, Yuan Taur

2021Microelectronic Engineering11 citationsDOI

Topics & Concepts

Silicon on insulatorSiliconMaterials scienceMOSFETThreshold voltageReverse short-channel effectShort-channel effectOptoelectronicsVoltageElectronic engineeringElectrical engineeringTransistorEngineeringSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignSilicon Carbide Semiconductor Technologies
Effects of BOX thickness, silicon thickness, and backgate bias on SCE of ET-SOI MOSFETs | Litcius