Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal–Organic Chemical Vapor Deposition
Zhepeng Zhang, Lauren Hoang, M. B. Hocking, Zhenghan Peng, Jenny Hu, Gregory Zaborski, Pooja Reddy, Johnny Dollard, David Goldhaber‐Gordon, Tony F. Heinz, Eric Pop, Andrew J. Mannix
Abstract
High Resolution Image Download MS PowerPoint Slide Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for excitonic physics and next-generation electronics, creating a strong demand to understand their growth, doping, and heterostructures. Despite significant progress in solid-source (SS-) and metal–organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly crystalline 2D TMDCs with controlled doping. Here, we report a hybrid MOCVD growth method that combines liquid-phase metal precursor deposition and vapor-phase organo-chalcogen delivery to leverage the advantages of both MOCVD and SS-CVD. Using our hybrid approach, we demonstrate WS 2 growth with tunable morphologies─from separated single-crystal domains to continuous monolayer films─on a variety of substrates, including sapphire, SiO 2, and Au. These WS 2 films exhibit narrow neutral exciton photoluminescence line widths down to 27–28 meV and room-temperature mobility up to 34–36 cm 2 V –1 s –1 . Through simple modifications to the liquid precursor composition, we demonstrate the growth of V-doped WS 2, Mo x W 1– x S 2 alloys, and in-plane WS 2 –MoS 2 heterostructures. This work presents an efficient approach for addressing a variety of TMDC synthesis needs on a laboratory scale.