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Performance improvement of spacer engineered n-type SOI FinFET at 3-nm gate length

V. Bharath Sreenivasulu, Narendar Vadthiya

2021AEU - International Journal of Electronics and Communications47 citationsDOI

Topics & Concepts

Materials scienceSilicon on insulatorOptoelectronicsIonDielectricDrain-induced barrier loweringScalingSubthreshold conductionSubthreshold slopeSiliconTransistorMOSFETNanotechnologyElectrical engineeringThreshold voltageVoltageChemistryMathematicsGeometryOrganic chemistryEngineeringSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignFerroelectric and Negative Capacitance Devices
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