Performance Improvement by Modifying Deposition Temperature in HfZrO<sub> <i>x</i> </sub> Ferroelectric Memory
Wen‐Chung Chen, Yung‐Fang Tan, Shih‐Kai Lin, Yong‐Ci Zhang, Kai‐Chun Chang, Yun-Hsuan Lin, Chien-Hung Yeh, Chung‐Wei Wu, Yu‐Hsuan Yeh, Kao-Yuan Wang, Hui‐Chun Huang, Tsung‐Ming Tsai, Jen‐Wei Huang, Ting‐Chang Chang
Abstract
The HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> (HZO) ferroelectric material is a promising material for ferroelectric memory and is compatible with the semiconductor process for ferroelectric random access memory (FeRAM) and negative capacitance field effect transistor. However, defects often exist in the grain boundary to influence the performance or reliability of devices. In addition, uniformity between devices must be considered when they are mass-produced. Therefore, the grain size will become important in determining the performance and reliability. In this study, we use electrical measurements of current-voltage, capacitance-voltage, and polarization-voltage measurements to test high- and low-temperature deposition devices, with a transmission electron microscope (TEM) image to confirm the grain size. Finally, we propose a model to explain the phenomenon and provide a method to obtain better ferroelectric memory.