High-Resolution Short-Circuit Fault Localization in a Multilayer Integrated Circuit Using a Quantum Diamond Microscope
Pauli Kehayias, J. Walraven, Andrea L. Rodarte, Andrew Mounce
Abstract
As integrated-circuit (IC) geometry and packaging become more sophisticated with ongoing fabrication and design innovations, the electrical-engineering community needs increasingly powerful failure-analysis (FA) methods to meet the growing troubleshooting challenges of multilayer (with multiple metal layers) and multichip components. In this work, we investigate an electronics FA method using a quantum diamond microscope (QDM) to image the magnetic fields from short-circuit faults. After quantifying the performance by detecting short-circuit faults in a multilayer silicon die, we assess how a QDM would detect faults in a heterogeneously integrated (HI) die stack. This work hopefully establishes QDM-based magnetic imaging as a competitive technique for electronics FA, offering high spatial resolution, high sensitivity, and robust instrumentation. We anticipate these advantages to be especially useful for finding faults deep within chip-stack ICs with many metal layers, optically opaque layers, or optically scattering layers.