Impact of annealing environment on electrical properties of yttrium-doped hafnium zirconium dioxide thin films prepared by the solution process

Abstract

Ferroelectric yttrium-doped hafnium zirconium dioxide (Y-HZO) was fabricated on Pt/Ti/SiO2/Si substrate by the solution process under various annealing environments. A metal–ferroelectric–metal structure with Pt as the top electrode was fabricated and characterized. Samples annealed at 600–800 °C in a vacuum environment showed ferroelectricity, which was confirmed by the polarization–electric field and capacitance–voltage measurements. The ferroelectric properties were dramatically improved when samples were annealed in a vacuum at 800 °C due to the decrease in leakage current compared to the Y-HZO films annealed at 800 °C in oxygen and nitrogen.

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