Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate
D. J. Godfrey, D. Nirmal, L. Arivazhagan, D. Godwinraj, N. Mohan Kumar, Yulin Chen, Wen-Kuan Yeh
Topics & Concepts
High-electron-mobility transistorElectric fieldMaterials scienceTransistorOptoelectronicsEnhanced Data Rates for GSM EvolutionElectron mobilityInduced high electron mobility transistorCurrent densityThreshold voltageCharge-carrier densityElectronField-effect transistorVoltageElectrical engineeringPhysicsEngineeringDopingTelecommunicationsQuantum mechanicsGaN-based semiconductor devices and materialsGa2O3 and related materialsSemiconductor materials and devices