Comparative Investigation of Band Gap and Gate Metal Engineered Novel Si0.2Ge0.8/GaAs Charge Plasma-Based JLTFET for Improved Electrical Performance
Kaushal Kumar, Ajay Kumar, Vinay Kumar, S. C. Sharma
Topics & Concepts
Ambipolar diffusionMaterials scienceOptoelectronicsSubthreshold slopeTransistorSubthreshold conductionField-effect transistorBand gapTunnel field-effect transistorElectronic circuitElectrical engineeringPlasmaVoltageEngineeringPhysicsQuantum mechanicsAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesFerroelectric and Negative Capacitance Devices