Effect of infiltration temperature on graphitization and properties of diamond/SiC composites with SiC matrix
T. Pham Hong, Yuhong Chen, Ruibin Liu, Wanxiu Hai, Xiuling Zhang, Meiling Liu, Suo Yan
Abstract
Abstract In this study, diamond/silicon carbide (SiC) composites were prepared by liquid Si infiltration. The effects of the infiltration temperature on the densification, diamond graphitization, and thermal conductivity of the composites were investigated. The effects of the diamond content on the thermal conductivity and bending strength were also explored. X‐ray diffraction and Raman spectroscopy detected diamond graphitization at an infiltration temperature of 1480°C. Almost no graphitized diamond was observed due to reactions between silicon and carbon to form SiC at infiltration temperatures higher than 1480°C. As the infiltration temperature increased, graphitized diamond was consumed, and the thermal conductivity of the composite rose. The thermal conductivity and bending strength of the composites depended on the diamond content, reaching values of 257 W/m K and 237 MPa, respectively, for the sample with a diamond content of 17.9 vol.%. The higher bending strength was mainly ascribed to the high diamond content and well‐bonded interface.