Boosting the energy storage performance of BCZT-based capacitors by constructing a Schottky contact
Zixiong Sun, Haoyang Xin, Liming Diwu, Zhanhua Wang, Ye Tian, Hongmei Jing, Xiuli Wang, Wanbiao Hu, Yongming Hu, Zhuo Wang
Abstract
Oxygen vacancies were introduced to form a Schottky contact, redistributing the electric field in the BCZT-based multilayers. This improved the voltage endurance of BCZT/BCZT-OD//(1P), leading to an enhanced W rec .
Topics & Concepts
Boosting (machine learning)TianCapacitorElectrical engineeringMaterials scienceMechanical engineeringComputer scienceEngineeringArtificial intelligenceVoltageAncient historyHistoryFerroelectric and Piezoelectric MaterialsAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices