Two‐Terminal Direct Wafer‐Bonded GaInP/AlGaAs//Si Triple‐Junction Solar Cell with AM1.5g Efficiency of 34.1%
David Lackner, Oliver Höhn, Ralph Müller, Paul Beutel, Patrick Schygulla, Hubert Hauser, Felix Predan, Gerald Siefer, Michael Schachtner, Jonas Schön, Jan Benick, Martin Hermle, Frank Dimroth
Abstract
The terrestrial photovoltaic market is dominated by single‐junction silicon solar cell technology. However, there is a fundamental efficiency limit at 29.4%. This is overcome by multijunction devices. Recently, a GaInP/GaAs//Si wafer‐bonded triple‐junction two‐terminal device is presented with a 33.3% (AM1.5g) efficiency. Herein, it is analyzed how this device is improved to reach a conversion efficiency of 34.1%. By improving the current matching, an efficiency of 35% (two terminals, AM1.5g) is expected.
Topics & Concepts
Triple junctionWaferOptoelectronicsEnergy conversion efficiencyMaterials scienceSolar cellPhotovoltaic systemTerminal (telecommunication)SiliconGallium arsenideWafer bondingElectrical engineeringComputer scienceTelecommunicationsEngineeringsolar cell performance optimizationNanowire Synthesis and ApplicationsSemiconductor Quantum Structures and Devices