Electrical Performance and Deep-Level Trap Characterization of p-CuGaO<sub>2</sub>/β-Ga<sub>2</sub>O<sub>3</sub> Heterojunctions for Power Electronics
C. V. R. K. Prasad, Geon‐Hee Lee, Jang Hyeok Park, Dudekula Shaikshavali, Kyong Jae Kim, Ho Jung Jeon, Nilesh Kumar Jaiswal, Miao Yu, Madani Labed, Sang-Mo Koo, You Seung Rim
Abstract
The development of β-Ga 2 O 3 -based power devices is hindered by the absence of effective p-type doping, limiting the realization of high-performance bipolar devices. In this study, we investigate the electrical characteristics and deep-level trap states of p-CuGaO 2 /β-Ga 2 O 3 heterojunction (HJ), offering a promising alternative for power electronics. Electrical characterization of the p-CuGaO 2 /β-Ga 2 O 3 HJ reveals a reduced V on and lower R on compared to a Pt/β-Ga 2 O 3 SBD. Notably, the HJ exhibits a maximum breakdown voltage of 1.054 kV. Analysis of the interface state density ( N SS ) demonstrates a significant reduction in N SS at the Pt/β-Ga 2 O 3 interface due to the p-CuGaO 2 interlayer. DLTS was employed to identify and distinguish majority carrier traps in both the SBD and HJ structures. In the SBD, dominant electron trap levels were observed at E C –0.757 eV (1.5 × 10 12 cm –3 ) and E C –1.332 eV (2.6 × 10 13 cm –3 ). The HJ exhibited trap levels at E C –0.268 eV (8.6 × 10 11 cm –3 ), E C -0.857 eV (2.1 × 10 12 cm –3 ), and E C -2.169 eV (3.3 × 10 13 cm –3 ). The observed modulation of trap characteristics through p-CuGaO 2 integration offers promising avenues for optimizing β-Ga 2 O 3 power device performance and reliability for power electronics applications.