Enhancement of spintronic terahertz emission enabled by increasing Hall angle and interfacial skew scattering
Yangkai Wang, Weiwei Li, Hao Cheng, Zheng Liu, Zhangzhang Cui, Jun Huang, Bing Xiong, Jiwen Yang, Haoliang Huang, Jianlin Wang, Zhengping Fu, Qiuping Huang, Yalin Lu
Abstract
Abstract Spintronic terahertz (THz) emitters (STEs) based on magnetic heterostructures have emerged as promising THz sources. However, it is still a challenge to achieve a higher intensity STE to satisfy all kinds of practical applications. Herein, we report a STE based on Pt 0.93 (MgO) 0.07 /CoFeB nanofilm by introducing dispersed MgO impurities into Pt, which reaches a 200% intensity compared to Pt/CoFeB and approaches the signal of 500 μm ZnTe crystal under the same pump power. We obtain a smaller spin diffusion length of Pt 0.93 (MgO) 0.07 and an increased thickness-dependent spin Hall angle relative to the undoped Pt. We also find that the thickness of a Pt layer leads to a drastic change in the interface role in the spintronic THz emission, suggesting that the underlying mechanism of THz emission enhancement is a combined effect of enhanced bulk spin hall angle and the interfacial skew scattering by MgO impurities. Our findings demonstrate a simple way to realize high-efficiency, stable, advanced spintronic THz devices.