Toward controlling the Al<sub>2</sub>O<sub>3</sub>/ZnO interface properties by <i>in situ</i> ALD preparation
C. Janowitz, Ali Mahmoodinezhad, Małgorzata Kot, Carlos Morales, Franziska Naumann, Paul Plate, Marvin Hartwig Zoellner, Florian Bärwolf, David Stolarek, Christian Wenger, Karsten Henkel, Jan Ingo Flege
Abstract
The electronic band alignment of an alumina/zinc oxide thin-film heterostructure solely grown by atomic layer deposition has been determined by XPS/UPS depth profiling, correlating the electronic properties with the interface chemical composition.
Topics & Concepts
HeterojunctionBand bendingX-ray photoelectron spectroscopyMaterials scienceSputteringIn situAugerRemote plasmaAtomic layer depositionConduction bandAnalytical Chemistry (journal)OptoelectronicsChemistryThin filmNanotechnologyAtomic physicsChemical vapor depositionChemical engineeringElectronQuantum mechanicsPhysicsEngineeringOrganic chemistryChromatographyZnO doping and propertiesSemiconductor materials and devicesGa2O3 and related materials