Skyrmion motion under temperature gradient and application in logic devices
Ravish Kumar Raj, Namita Bindal, Brajesh Kumar Kaushik
Abstract
Abstract Under the presence of temperature gradient (TG) on a nanotrack, it is necessary to investigate the skyrmion dynamics in various magnetic systems under the combined effect of forces due to magnonic spin transfer torque <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mo stretchy="false">(</mml:mo> <mml:mi>μ</mml:mi> <mml:mi>S</mml:mi> <mml:mi>T</mml:mi> <mml:mi>T</mml:mi> <mml:mo stretchy="false">)</mml:mo> <mml:mo>,</mml:mo> </mml:math> thermal STT ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mi>τ</mml:mi> <mml:mi>S</mml:mi> <mml:mi>T</mml:mi> <mml:mi>T</mml:mi> </mml:math> ), entropic difference <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mo stretchy="false">(</mml:mo> <mml:mi mathvariant="italic">dS</mml:mi> <mml:mo stretchy="false">)</mml:mo> <mml:mo>,</mml:mo> </mml:math> as well as thermal induced dipolar field (DF). Hence, in this work, the dynamics of skyrmions in ferromagnets (FM), synthetic antiferromagnets (SAF), and antiferromagnets (AFM) have been studied under different TGs and damping constants ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>α</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>G</mml:mi> </mml:mrow> </mml:msub> </mml:math> ). It is observed that <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>α</mml:mi> </mml:mrow> <mml:mrow> <mml:mi>G</mml:mi> </mml:mrow> </mml:msub> </mml:math> plays a major role in deciding the direction of skyrmion motion either towards the hotter or colder side in different magnetic structures. Later, FM skyrmion based logic device is proposed that consists of a cross-coupled nanotrack, where the skyrmions on horizontal and vertical nanotrack are controlled by exploiting TG and electrical STT ( eSTT ), respectively by taking the advantages of thermal induced skyrmion Hall effect (SkHE). The proposed device performs AND and OR logic functionalities simultaneously, when the applied current density is <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mn>2</mml:mn> <mml:mo>×</mml:mo> <mml:msup> <mml:mn>10</mml:mn> <mml:mn>11</mml:mn> </mml:msup> <mml:mspace width="0.25em"/> <mml:mi mathvariant="normal">A</mml:mi> <mml:mspace width="0.25em"/> <mml:msup> <mml:mi mathvariant="normal">m</mml:mi> <mml:mrow> <mml:mo>-</mml:mo> <mml:mn>2</mml:mn> </mml:mrow> </mml:msup> <mml:mo>.</mml:mo> </mml:math> Moreover, the proposed device is also able to exhibit the half adder functionality by tuning the applied current density to <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mn>3</mml:mn> <mml:mo>×</mml:mo> <mml:msup> <mml:mn>10</mml:mn> <mml:mn>11</mml:mn> </mml:msup> <mml:mspace width="0.25em"/> <mml:mi mathvariant="normal">A</mml:mi> <mml:mspace width="0.5em"/> <mml:msup> <mml:mi mathvariant="normal">m</mml:mi> <mml:mrow> <mml:mo>-</mml:mo> <mml:mn>2</mml:mn> </mml:mrow> </mml:msup> <mml:mo>.</mml:mo> </mml:math> The total energy consumption for AND and OR logic operation and half adder are 33.63 fJ and 25.06 fJ, respectively. This paves the way for the development of energy-efficient logic devices with ultra-high storage density.