Heterovalent-doping-enabled atom-displacement fluctuation leads to ultrahigh energy-storage density in AgNbO3-based multilayer capacitors
Lifeng Zhu, Shiqing Deng, Lei Zhao, Gen Li, Qi Wang, Linhai Li, Yongke Yan, He Qi, Bo‐Ping Zhang, Jun Chen, Jing‐Feng Li
Abstract
Abstract Dielectric capacitors with high energy storage performance are highly desired for next-generation advanced high/pulsed power capacitors that demand miniaturization and integration. However, the poor energy-storage density that results from the low breakdown strength, has been the major challenge for practical applications of dielectric capacitors. Herein, we propose a heterovalent-doping-enabled atom-displacement fluctuation strategy for the design of low-atom-displacements regions in the antiferroelectric matrix to achieve the increase in breakdown strength and enhancement of the energy-storage density for AgNbO 3 -based multilayer capacitors. An ultrahigh breakdown strength ~1450 kV·cm −1 is realized in the Sm 0.05 Ag 0.85 Nb 0.7 Ta 0.3 O 3 multilayer capacitors, especially with an ultrahigh U rec ~14 J·cm −3 , excellent η ~ 85% and P D,max ~ 102.84 MW·cm −3 , manifesting a breakthrough in the comprehensive energy storage performance for lead-free antiferroelectric capacitors. This work offers a good paradigm for improving the energy storage properties of antiferroelectric multilayer capacitors to meet the demanding requirements of advanced energy storage applications.