HfO<sub>2</sub>-based ferroelectric synaptic devices: challenges and engineering solutions
Taegyu Kwon, Heejin Choi, Dong Hyun Lee, Dong Hee Han, Yong Hyeon Cho, Intak Jeon, Chang Hwa Jung, Hanjin Lim, Taehwan Moon, Min Hyuk Park
Abstract
This perspective article discusses the limitations and potential of HfO 2 ferroelectrics in synaptic devices and introduces key strategies at both the device and array levels to enhance the synaptic performance of HfO 2 -based ferroelectrics.
Topics & Concepts
FerroelectricityMaterials scienceNanotechnologyOptoelectronicsDielectricFerroelectric and Negative Capacitance DevicesAdvanced Memory and Neural ComputingSemiconductor materials and devices