Large‐Area Growth of Ferroelectric 2D γ‐In<sub>2</sub>Se<sub>3</sub> Semiconductor by Spray Pyrolysis for Next‐Generation Memory
Taebin Lim, Jae Heon Lee, Dong-Gyu Kim, Jinbaek Bae, Seungchae Jung, Sang Mo Yang, Joon I. Jang, Jin Jang, Jin Jang, Jin Jang
Abstract
Abstract In 2 Se 3 , 2D ferroelectric‐semiconductor, is a promising candidate for next‐generation memory device because of its outstanding electrical properties. However, the large‐area manufacturing of In 2 Se 3 is still a big challenge. In this work, spray pyrolysis technique is introduced for the growth of large‐area In 2 Se 3 thin film. A polycrystalline γ‐In 2 Se 3 layer can be grown on 15 cm × 15 cm glasss at the substrate temperature of 275 °C. The In 2 Se 3 ferroelectric‐semiconductor field effect transistor (FeS‐FET) on glass substrate demonstrates a large hysteresis window of 40.3 V at the ±40 V of gate voltage sweep and excellent uniformity. The FeS‐FET exhibits an electron field effect mobility of 0.97 cm 2 V −1 s −1 and an on/off current ratio of >10 7 in the transfer curves. The memory behavior of the large‐area, In 2 Se 3 FeS‐FETs for next‐generation memory is demonstrated.