Broad Diversity of Near-Infrared Single-Photon Emitters in Silicon
Alrik Durand, Yoann Baron, Walid Redjem, Tobias Herzig, A. Benali, Sébastien Pezzagna, Jan Meijer, Andrej Kuznetsov, Jean‐Michel Gérard, Isabelle Robert-Philip, Marco Abbarchi, V. Jacques, Guillaume Cassabois, A. Dréau
Abstract
We report the detection of individual emitters in silicon belonging to seven different families of optically active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the 1.1-1.55 μm range, spanning the O and C telecom bands. We analyze their photoluminescence spectra, dipolar emissions, and optical relaxation dynamics at 10 K. For a specific family, we show a constant emission intensity at saturation from 10 K to temperatures well above the 77 K liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these individual artificial atoms are promising systems to investigate for Si-based quantum technologies.