Fullerene-free, MoTe2 atomic layer blended bulk heterojunctions for improved organic solar cell and photodetector performance
Dhanasekaran Vikraman, Sajjad Hussain, Hailiang Liu, Syed Hassan Abbas Jaffery, K. Karuppasamy, Junho Lee, A. Kathalingam, Jongwan Jung, Hyun‐Seok Kim
Abstract
This paper introduces a facile solution route to fabricate MoTe2 grain nano-domains for hybrid polymer heterojunction solar cells and photodetectors. Fabricated MoTe2 structures were investigated using Raman and XRD, and surface morphologies characterized using FE-SEM and TEM. We subsequently assembled a non-fullerene polymer heterojunction device using the PBDB-T:ITIC active layer for ITO/HTL/active-layer/LiF/Al architype solar cells and photodetectors. We also investigated effects from different MoTe2 nanostructure proportions embedded in the PBDB-T:ITIC polymer matrix as active layers to assemble solar cell and photodetector devices. Maximum power conversion efficiency ≈8.94% with improved carrier mobility ≈9.23 × 10−4 cm2 V−1 s−1 was achieved for 10 vol% MoTe2 nanostructure inclusion with PBDB-T:ITIC active layer. A fabricated photodetector using 10 vol%-MoTe2@PBDB-T:ITIC film achieved maximum detectivity ≈2.62 × 1010 Jones with 0.706 A W−1 responsivity at 755 μW cm−2 light density under 656 nm laser source. The proposed facile approach to fabricate 2D MoTe2 atomic layer infusion with polymer heterojunction offers a credible mechanism to progress interfacial characteristics for future organic semiconducting devices.