Realization of Ultra-Scaled MoS<sub>2</sub> Vertical Diodes via Double-Side Electrodes Lamination
Wanying Li, Liting Liu, Quanyang Tao, Yang Chen, Zheyi Lu, Lingan Kong, Weiqi Dang, Wujun Zhang, Zhiwei Li, Qianyuan Li, Jie Tang, Liwang Ren, Wenjing Song, Xidong Duan, Chao Ma, Yuanjiang Xiang, Lei Liao, Yuan Liu
Abstract
Schottky diode is the fundamental building blocks for modern electronics and optoelectronics. Reducing the semiconductor layer thickness could shrink the vertical size of a Schottky diode, improving its speed and integration density. Here, we demonstrate a new approach to fabricate a Schottky diode with ultrashort physical length approaching atomic limit. By mechanically laminating prefabricated metal electrodes on both-sides of two-dimensional MoS2, the intrinsic metal–semiconductor interfaces can be well retained. As a result, we demonstrate the thinnest Schottky diode with a length of 2.6 nm and decent rectification behavior. Furthermore, with a diode length smaller than the semiconductor depletion length, the carrier transport mechanisms are investigated and explained by thickness-dependent and temperature-dependent electrical measurements. Our study not only pushes the scaling limit of a Schottky diode but also provides a general double-sided electrodes integration approach for other ultrathin vertical devices.