Two-Inch Aluminum Nitride (AIN) Single Crystal Growth for Commercial Applications
Robert T. Bondokov, Sean P. Branagan, Naoki Ishigami, James Grandusky, T. Nagatomi, Kazuo Tatsuta, Thomas Miebach, Jianfeng Chen
Abstract
Aluminum nitride (AlN) bulk single crystals were grown using physical vapor transport method. The resulting wafers were characterized according to the requirements for electronic device applications. Currently many thousands per year of such 2-inch wafers are used as substrates for UVC-LEDs emitting in the range 215 nm – 270 nm, which is the most efficient germicidal range for many pathogens. Highest crystallinity and the lowest published UV-transparency are confirmed by standard analytical techniques.
Topics & Concepts
CrystallinityNitrideMaterials scienceWaferAluminiumOptoelectronicsGallium nitrideIndium nitrideNanotechnologyMetallurgyComposite materialLayer (electronics)GaN-based semiconductor devices and materialsAcoustic Wave Resonator TechnologiesSilicon Nanostructures and Photoluminescence