Novel 900 nm diode lasers with epitaxially stacked multiple active regions and tunnel junctions
H. Wenzel, A. Maaßdorf, Christof Zink, Dominik Martin, M. Weyers, Andrea Knigge
Abstract
Abstract A multi‐active‐region bipolar‐cascade edge‐emitting laser emitting at nearly 900 nm is presented. The three active regions and two tunnel junctions located in a single waveguide core share the same third‐order vertical mode. A slope efficiency of 3.6 W/A was measured with a threshold current density of 230 A/cm 2 . The epitaxial layer stack developed features with very low internal optical losses of 0.7 cm −1 . The voltage extrapolated to vanishing current is only 0.3 V larger than 3 times the voltage of 1.4 V originating from the photon energy.
Topics & Concepts
OptoelectronicsEpitaxyMaterials scienceLaserStack (abstract data type)DiodeCascadeTunnel junctionActive layerCurrent densityVoltageOpticsSemiconductor laser theoryLayer (electronics)Electrical engineeringPhysicsQuantum tunnellingChemistryEngineeringComputer scienceComposite materialThin-film transistorQuantum mechanicsProgramming languageChromatographySemiconductor Lasers and Optical DevicesSemiconductor Quantum Structures and DevicesPhotonic and Optical Devices