Predicted septuple-atomic-layer Janus MSiGeN<sub>4</sub> (M = Mo and W) monolayers with Rashba spin splitting and high electron carrier mobilities
San-Dong Guo, Wen-Qi Mu, Yu-Tong Zhu, Ru-Yue Han, Wen-Cai Ren
Abstract
In this work, Janus monolayers are predicted for a new 2D MA<sub>2</sub>Z<sub>4</sub> family by means of first-principles calculations. The predicted MSiGeN<sub>4</sub> (M = Mo and W) monolayers exhibit dynamic, thermodynamic and mechanical stability, and they are indirect band-gap semiconductors.
Topics & Concepts
JanusMonolayerMaterials scienceCondensed matter physicsElectron mobilitySpin (aerodynamics)ElectronChemical physicsCrystallographyFree carrierSelf-assembled monolayer2D Materials and ApplicationsTopological Materials and PhenomenaMolecular Junctions and Nanostructures