Impact of AlO<i>y</i> Interfacial Layer on Resistive Switching Performance of Flexible HfO<i>ₓ</i>/AlO<i>y</i> ReRAMs
S. Biswas, A. D. Paul, P. Das, Punam Tiwary, H. J. Edwards, V.R. Dhanak, Ivona Z. Mitrović, Rajat Mahapatra
Abstract
The Al/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> /AlO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> /indium tin oxide (ITO)/polyethylene terephthalate (PET) flexible resistive random access memory (ReRAM) device was fabricated at room temperature to study the effect of AlO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> interfacial layer on resistive switching (RS). Incorporating the interfacial layer AlO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">y</sub> improves the cycle-to-cycle, cell-to-cell uniformity and switching resistance ratio (>10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> ). It introduces the oxygen vacancies in HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> which controls the formation and rupture of filament and plays an important role in improving RS characteristics. The device also maintains the stable switching operation under the flexible condition and at elevated temperature up to 100 °C. The device area and temperature-dependent switching characteristics confirm the Ohmic (hopping) conduction in low-resistance state (LRS) and the space charge-limited conduction (SCLC) in high-resistance state (HRS).