Enhancing radiation-resistance of amorphous indium–zinc-oxide thin-film transistors by group IV transition element doping
Young‐Seok Kim, Myung‐Gil Kim, Choongik Kim
Abstract
InZnO TFTs doped with group IV transition elements showed enhanced radiation-resistance compared to undoped InZnO TFTs.
Topics & Concepts
Materials scienceThin-film transistorDopingIndiumOptoelectronicsAmorphous solidZincRadiationRadiation resistanceOxide thin-film transistorOxideNanotechnologyMetallurgyOpticsCrystallographyLayer (electronics)ChemistryPhysicsThin-Film Transistor TechnologiesSilicon Nanostructures and PhotoluminescenceCCD and CMOS Imaging Sensors