Generation of deep levels near the 4H-SiC surface by thermal oxidation
Haruki Fujii, Mitsuaki Kaneko, Tsunenobu Kimoto
Abstract
Abstract Deep levels near the surface of 4H-SiC after dry oxidation were investigated. A large and broad peak appeared in the low-temperature range of deep level transient spectroscopy (DLTS) spectra after oxidation of SiC at 1300 °C, indicating multiple deep levels energetically located near the conduction band edge are generated inside SiC by thermal oxidation. Analyses of the DLTS spectra acquired with changing the bias voltage revealed that the majority of deep levels is located very near the SiC surface, within about 6 nm deep region from the surface. The area density of the observed deep levels is higher than 3 × 10 12 cm −2 .
Topics & Concepts
Deep-level transient spectroscopyConduction bandMaterials scienceThermal oxidationSpectral lineSurface statesRange (aeronautics)Enhanced Data Rates for GSM EvolutionSurface (topology)Analytical Chemistry (journal)OptoelectronicsChemistryComposite materialSiliconGeometryTelecommunicationsPhysicsEnvironmental chemistryQuantum mechanicsComputer scienceAstronomyElectronMathematicsSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesThin-Film Transistor Technologies