Isomeric Dithienothiophene‐Based Hole Transport Materials: Role of Sulphur Atoms Positions on Photovoltaic Performance of Inverted Perovskite Solar Cells
Jie Yang, Jiachen Huang, Chao Zhang, Huiliang Sun, Bolin Li, Yimei Wang, Kui Feng, Qiaogan Liao, Qingqing Bai, Li Niu, Hua Wang, Xugang Guo
Abstract
Abstract Hole transport materials (HTMs) are of great significance to improve the efficiency and long‐term stability of perovskite solar cells (PVSCs). Herein, a series of new HTMs based on isomeric dithienothiophene (DTT) are designed and synthesized. Effects of sulphur (S) atoms positions on defect passivation and performance of PVSCs are systematically investigated through theoretical computation, X‐ray diffraction, X‐ray photoelectron spectroscopy, etc. The three molecules display noticeable isomeric effect in energy level, light absorption, and hole mobility. With S atoms varied from bottom‐bottom‐bottom in 3T‐1 to bottom‐bottom‐top in 3T‐2, then to bottom‐top‐bottom in 3T‐3, the grown perovskite crystallite on the corresponding HTMs shows more homeogenous film morphology and less pinhole traps. Meanwhile, nonradiative recombination losses can be suppressed and hole extraction efficiency at HTM/perovskite surface can be improved from 3T‐1 to 3T‐3. As a result, the remarkable improvement of short‐circuit current density nd open‐circuit voltage in inverted perovskite solar cells can be realized with increasing the sulphur atoms contribution to the molecular conjugation. More importantly, 3T‐3‐based dopant‐free HTM achieves a top power conversion efficiency of 19.23% in PVSCs with good device stability under green solvent processing. These results demonstrate the role of S atoms positions in HTMs on photovoltaic performance of PVSCs and the potential of DTT in developing eco‐friendly HTMs toward efficient PVSCs.