Evolution of pronounced ferroelectricity in Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>thin films scaled down to 3 nm
Chin-I Wang, Hsin-Yang Chen, Chun-Yuan Wang, Teng-Jan Chang, Yu‐Sen Jiang, Chih‐Sheng Chang, Miin‐Jang Chen
Abstract
Thickness dependent ferroelectric characteristics of HZO are systematically demonstrated down to 3 nm, exhibiting low operation voltage and high endurance.
Topics & Concepts
Materials scienceFerroelectricityThin filmOptoelectronicsCondensed matter physicsAnalytical Chemistry (journal)NanotechnologyDielectricChromatographyChemistryPhysicsFerroelectric and Negative Capacitance DevicesMXene and MAX Phase MaterialsSemiconductor materials and devices