A Three-Dimensional Simulation Study of the Novel Comb-Like-Channel Field-Effect Transistors for the 5-nm Technology Node and Beyond
Xinhao Li, Huilong Zhu, Weizhuo Gan, Weixing Huang, Zhenhua Wu
Abstract
A novel comb-like-channel field-effect transistor (CombFET), which is the combination of the fin field-effect transistor (FinFET) and nanosheet FET (NshFET) geometries in the channel region, is proposed and evaluated numerically for the first time. Our simulations show that: 1) with the same footprint, CombFET ON-current is 43% higher than FinFET and 53% higher than gate-all-around FET (GAAFET) due to its larger effective channel width and relieved channel quantum confinement and 2) CombFETs have great advantages in performance optimization through surface orientation over FinFETs and NshFETs. Thanks to the unique structural design, CombFET can also be used to improve or eliminate the bending or adhesion effects between nanosheets/comb teeth.