Optimization of factors influencing microwave plasma modification of single-crystal SiC (0001)
Mengmeng Shen, Yulu Yang, Min Wei, Yiwei Liang, Lingwei Wu, Jiahao Ye, Hongyu Chen, Wei Hang
Topics & Concepts
Materials scienceMicrowaveMultiphysicsSilicon carbideSurface modificationPolishingVolumetric flow rateSurface roughnessPlasma processingPlasmaScanning electron microscopeChemical-mechanical planarizationOptoelectronicsFlow (mathematics)Rotational speedIon sourceAnalytical Chemistry (journal)Chemical processComposite materialProcess optimizationDesign of experimentsCarbideElectronic engineeringMechanical engineeringResponse surface methodologyProcess (computing)Orthogonal arrayMicrowave powerLayer (electronics)Surface finishSiliconProcess engineeringInductively coupled plasmaFlow velocityDie (integrated circuit)Power (physics)Electromagnetic shieldingAdvanced Surface Polishing TechniquesAdvanced ceramic materials synthesisHigh-Temperature Coating Behaviors