Impact of metallic and vacancy-oriented filamentary switching on memristor device based on Cs2AgInCl6 double halide perovskite
Awais Khalid, Abdulaziz M. Alanazi, Suliman A. Alderhami, Amal H. Alsehli, Marwah M. Alsowayigh, Ahmad M. Saeedi, Hasan B. Albargi, Hamed M. Al‐Saidi
Topics & Concepts
Materials scienceMemristorPerovskite (structure)ElectrodeOptoelectronicsHalideVacancy defectNanotechnologyChemical engineeringCondensed matter physicsElectronic engineeringInorganic chemistryPhysical chemistryChemistryEngineeringPhysicsPerovskite Materials and ApplicationsAdvanced Memory and Neural ComputingConducting polymers and applications