Isochronal annealing study of Mg-implanted p-type GaN activated by ultra-high-pressure annealing
Kazufumi Hirukawa, Kensuke Sumida, Hideki Sakurai, Hajime Fujikura, Masahiro Horita, Yohei Otoki, Kacper Sierakowski, Michał Boćkowski, Tetsu Kachi, Jun Suda
Abstract
Abstract Isochronal annealing was performed on Mg-ion-implanted GaN under 1 GPa N 2 ambient pressure for 5 min at temperatures of 1573–1753 K. Secondary ion mass spectrometry showed diffusion of Mg atoms and introduction of H atoms during annealing. Deeper diffusion was observed with increasing temperature. From Hall-effect measurements, p-type conductivity was found even for the sample with the lowest annealing temperature of 1573 K. For this sample, the acceptor activation ratio was 23% and the compensation ratio was 93%. The acceptor activation ratio increased to almost 100% and the compensation ratio decreased to 12% with increasing annealing temperature.