Boosting High Electric Breakdown Strength for Excellent Energy Storage Performance in Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>-Based Lead-Free Ceramics via a High Entropy Strategy
Pu Mao, Yongguang Guo, Ting Wang, Liqiang He, Wanjin Li, Zhiyong Liu, Bing Xie, Kun Guo, Longlong Shu, Jinghui Gao
Abstract
High-performance dielectric capacitors featuring large recoverable energy storage density ( W rec ) and high discharge efficiency (η) are beneficial to realize the device miniaturization, lightweight property, and sustainability of advanced pulse power systems. The obtainment of a high electric breakdown strength ( E b ) is crucial for improving the energy storage performance of dielectric materials. However, as for Bi 0.5 Na 0.5 TiO 3 (BNT) lead-free relaxor ferroelectric ceramics, the relatively lower E b directly limits their electrical performance improvement and practical applications. Herein, a popular high entropy strategy was employed to rationally design and prepare the (Bi 0.5 Na 0.5 ) x (Sr 0.25 Ba 0.25 La 0.25 K 0.25 ) (1– x ) TiO 3 (BNSLBKT- x ) lead-free relaxor ferroelectric ceramics based on the BNT matrix. Encouragingly, the BNSLBKT-0.2 high-entropy ceramic exhibits a high E b of 510 kV/cm, and this can be ascribed to the refined grains and enhanced activation energy. Moreover, it is confirmed that the polar nanoregions (PNRs) exist in the BNSLBKT-0.2 ceramic by the piezoresponse force microscopy (PFM) and transmission electron microscopy (TEM) characteristics, further strengthening relaxation behaviors and decreasing remanent polarization ( P r ). It is anticipated that a high W rec of 4.6 J/cm 3 and a good η of 86% are obtained in this BNSLBKT-0.2 high-entropy ceramic. More importantly, the BNSLBKT-0.2 ceramic displays excellent frequency stability of capacitive energy storage at 10–1000 Hz and good temperature stability at 20–140 °C. The fast discharge rate (τ 0.9 = 0.26 μs) and the high P D of 49.2 MW/cm are also achieved in this BNSLBKT-0.2 ceramic. The findings demonstrate that this high entropy design is an effective strategy for developing dielectrics with excellent energy storage capability to meet the requirements of modern dielectric capacitor applications.