Litcius/Paper detail

Thermal analysis of GaN HEMTs using nongray multi-speed phonon lattice Boltzmann method under Joule heating effect

Xixin Rao, Yipeng Wu, Kongzhang Huang, Haitao Zhang, Chengdi Xiao

2024Microelectronics Journal13 citationsDOI

Topics & Concepts

Gallium nitrideJoule heatingMaterials sciencePhononOptoelectronicsBallistic conductionBoltzmann equationTransistorThermalHigh-electron-mobility transistorCondensed matter physicsVoltageLayer (electronics)NanotechnologyElectronPhysicsElectrical engineeringThermodynamicsEngineeringComposite materialQuantum mechanicsThermal properties of materialsGaN-based semiconductor devices and materialsThermal Radiation and Cooling Technologies
Thermal analysis of GaN HEMTs using nongray multi-speed phonon lattice Boltzmann method under Joule heating effect | Litcius