Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers
Massimo Davide Pirnaci, Luca Spitaleri, Dario Tenaglia, Francesco Perricelli, Maria Elena Fragalà, Corrado Bongiorno, Antonino Gulino
Abstract
-based plasma etching, on the 4H-SiC polytype substrate. An interferometric algorithm that finds the endpoint to stop etching governed the trench depth. Scanning electron microscopy, transmission electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy analyses stated the high quality and uniformity of the trenches. These materials are particularly promising for the fabrication of the SiC MOSFET to be implemented in the manufacturing of power devices.
Topics & Concepts
Materials scienceJFETOptoelectronicsSilicon carbideTrenchWaferEtching (microfabrication)Field-effect transistorPower MOSFETReactive-ion etchingSemiconductorMOSFETTransistorCharacterization (materials science)NanotechnologyElectrical engineeringComposite materialVoltageEngineeringLayer (electronics)Silicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesCopper Interconnects and Reliability