A Physics-Based Approach to Model Hot-Electron Trapping Kinetics in p-GaN HEMTs
Nicola Modolo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Sébastien Sicre, G. Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Abstract
Hot electron trapping can significantly modify the performance of GaN-based HEMTs during hard switching operation. In this letter, we present a physics-based model based on rate equations to model the trapping kinetics of hot-electrons in GaN transistors submitted to semi- ON-state stress. The model is validated through comparison with the experimental data, obtained by means of a pulsed-drain current transient setup developed ad-hoc. Hot-electron trapping is found to have logarithmic time dependence; the first 10 μs of operation are critical in determining the current collapse during stress.
Topics & Concepts
TrappingTransistorHot electronElectronTransient (computer programming)KineticsStress (linguistics)Materials scienceLogarithmHigh-electron-mobility transistorGallium nitrideMOSFETOptoelectronicsPhysicsNanotechnologyComputer scienceVoltageMathematicsNuclear physicsQuantum mechanicsLinguisticsPhilosophyBiologyEcologyMathematical analysisOperating systemLayer (electronics)GaN-based semiconductor devices and materialsSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design